| US 7,571,529 B2 | ||
| Method for forming an electronic device in multi-layer structure | ||
| Henning Sirringhaus, Cambridge (United Kingdom); Richard Henry Friend, Cambridge (United Kingdom); Natalie Stutzmann, Eindhoven (Netherlands); and Paul Smith, Zürich (Switzerland) | ||
| Assigned to Cambridge University Technical Services Limited, Cambridge (United Kingdom); and Eidgenossische Technische Hochschule Zurich, Zurich (Switzerland) | ||
| Appl. No. 10/398,442 PCT Filed Oct. 04, 2001, PCT No. PCT/GB01/04421 § 371(c)(1), (2), (4) Date Dec. 15, 2003, PCT Pub. No. WO02/29912, PCT Pub. Date Apr. 11, 2002. |
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| Claims priority of application No. 0024294.1 (GB), filed on Oct. 04, 2000. | ||
| Prior Publication US 2005/0071969 A1, Apr. 07, 2005 | ||
| Int. Cl. B23P 17/00 (2006.01) | ||
| U.S. Cl. 29—417 [29/825; 29/830; 29/831; 29/832] | 58 Claims |
| 1. A method for forming an electronic switching device in a multi-layer structure comprising at least a first layer and an
underlying second layer, the method comprising:
forcing a microcutting protrusion of a cutting tool into the multi-layer structure so as to cause the protrusion to microcut
through the first layer and into the second layer; and
wherein the microcut first layer forms at least one electrode of said electronic switching device,
wherein the second layer is in the solid state while the forcing step is performed, and
wherein the electronic switching device comprises a semiconducting material between source and drain electrodes, and wherein
the microcutting serves to define an edge adjacent to the semiconducting material of at least one of said source and drain
electrodes.
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