US D597,428 S
Infrared ray sensor
Masayuki Sato, Tokyo (Japan); and Toshiaki Fukunaka, Tokyo (Japan)
Assigned to Asahi Kasei EMD Corporation, Tokyo (Japan)
Filed on Sep. 21, 2007, as Appl. No. 29/287,806.
Claims priority of application No. 2007-008486 (JP), filed on Apr. 02, 2007.
Term of patent 14 Years
LOC (9) Cl. 10 - 05
U.S. Cl. D10—104
OG exemplary drawing
 
The ornamental design for an infrared ray sensor, as shown and described.