| US 7,569,845 B2 | ||
| Phase-change memory and fabrication method thereof | ||
| Yi-Chan Chen, Yunlin County (Taiwan); and Wen-Han Wang, Hsinchu (Taiwan) | ||
| Assigned to Industrial Technology Research Institute, Hsinchu (Taiwan); Powerchip Semiconductor Corp., Hsin-Chu (Taiwan); Nanya Technology Corporation, Taoyuan (Taiwan); ProMOS Technologies Inc., Hsinchu (Taiwan); and Winbond Electronics Corp., Hsinchu (Taiwan) | ||
| Filed on Oct. 24, 2006, as Appl. No. 11/552,492. | ||
| Claims priority of application No. 95129774 A (TW), filed on Aug. 14, 2006. | ||
| Prior Publication US 2008/0035961 A1, Feb. 14, 2008 | ||
| Int. Cl. H01L 47/00 (2006.01) | ||
| U.S. Cl. 257—3 [257/246; 257/E45.002; 438/282; 438/622] | 7 Claims |
| 1. A phase-change memory, comprising:
a bottom electrode formed on a substrate;
a first isolation layer formed on the substrate;
a top electrode formed on the isolation layer; and
a first phase-change material formed on the bottom electrode, wherein the top electrode and the bottom electrode are electrically
connected via the first phase-change material, wherein a sidewall of the bottom electrode and a sidewall of the first phase-change
material are substantially aligned with a sidewall of the first isolation layer.
|