| US 7,569,500 B2 | ||
| ALD metal oxide deposition process using direct oxidation | ||
| Craig R. Metzner, Fremont, Calif. (US); Shreyas S. Kher, Campbell, Calif. (US); Vidyut Gopal, Santa Clara, Calif. (US); Shixue Han, Milpitas, Calif. (US); and Shankarram A. Athreya, San Jose, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on May 31, 2006, as Appl. No. 11/421,283. | ||
| Application 11/421283 is a division of application No. 10/247103, filed on Sep. 19, 2002. | ||
| Claims priority of provisional application 60/388929, filed on Jun. 14, 2002. | ||
| Prior Publication US 2006/0223339 A1, Oct. 05, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/31 (2006.01) | ||
| U.S. Cl. 438—785 [257/E21.006; 427/249.19] | 20 Claims |
| 1. A method for forming a hafnium material on a substrate, comprising:
positioning a substrate within a process chamber;
exposing the substrate to a hafnium precursor comprising the chemical formula (R′RN)4Hf, wherein each R and R′ is independently a hydrogen group or an alkyl group having from one to four carbon atoms;
exposing the substrate to active oxygen species formed by a remote plasma source; and
exposing the substrate to active nitrogen species.
|