| US 7,569,493 B2 | ||
| Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate | ||
| Akihiro Hachigo, Itami (Japan); and Takayuki Nishiura, Itami (Japan) | ||
| Assigned to Sumitomo Electric Industries, Ltd., Osaka (Japan) | ||
| Filed on May 17, 2006, as Appl. No. 11/435,129. | ||
| Claims priority of application No. 2005-144101 (JP), filed on May 17, 2005; and application No. 2006-060999 (JP), filed on Mar. 07, 2006. | ||
| Prior Publication US 2006/0264011 A1, Nov. 23, 2006 | ||
| Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01) | ||
| U.S. Cl. 438—759 [438/752; 257/615; 257/E21.22; 257/E33.028] | 44 Claims |
| 1. A method of cleaning a nitride-based compound semiconductor, comprising the steps of:
preparing a nitride-based compound semiconductor; and
cleaning said nitride-based compound semiconductor with a cleaning liquid having a pH of at least 7.1,
wherein in the step of cleaning, at least one of applying an ultrasonic wave to said cleaning liquid and vibrating said cleaning
liquid is performed.
|