| US 7,569,482 B2 | ||
| Method for the selective removal of an unsilicided metal | ||
| Aomar Halimaoui, La Terrasse (France) | ||
| Assigned to STMicroelectronics (Crolles 2) SAS, Crolles Cedex (France) | ||
| Filed on Jan. 15, 2007, as Appl. No. 11/654,388. | ||
| Claims priority of application No. 06 00436 (FR), filed on Jan. 18, 2006. | ||
| Prior Publication US 2007/0197029 A1, Aug. 23, 2007 | ||
| Int. Cl. H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—658 [438/752; 438/755; 438/650; 438/651] | 21 Claims |

| 1. A silicidation method, comprising:
deposition of at least one metal on a silicon-containing region;
formation of a metal silicide; and
removal of a residue of metal that has not been silicided during the formation of the metal silicide, wherein removal of the
residue of metal comprises:
a) conversion of said residue of metal to an alloy containing a germanide of said metal; and
b) removal of said alloy by dissolving it in a chemical solution.
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