| US 7,569,475 B2 | ||
| Interconnect structure having enhanced electromigration reliability and a method of fabricating same | ||
| Chih-Chao Yang, Poughkeepsie, N.Y. (US); Ping-Chuan Wang, Hopewell Junction, N.Y. (US); and Yun-Yu Wang, Poughquag, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Nov. 15, 2006, as Appl. No. 11/560,044. | ||
| Prior Publication US 2008/0111239 A1, May 15, 2008 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—618 | 1 Claim |
| 1. A method of fabricating an interconnect structure comprising:
providing at least one opening in a dielectric material, said at least one opening is lined with a diffusion baffler and said
dielectric material is comprised of SiO2, silsesquioxanes, C doped oxides that include atoms of Si, C, O and H, thermosetting polyarylene ethers, or multilayers thereof;
forming a first conductive region comprising Cu or a Cu alloy utilizing a bottom-up deposition fill process within said at
least one opening;
forming an electromigration (EM) preventing liner comprising Ta, TaN, Ti, TiN, Ru, RuN, RuTaN, RuTaN, Ir, IrCu or Co(W,B,P,Mo,Re)
and having a thickness from about 2 to about 8 nm by a non-selective deposition process on at least a surface of said first
conductive region, said EM preventing liner is U-shaped and abuts said diffusion barrier; and
forming a second conductive region comprised of Cu or a Cu alloy on said EM preventing liner, said first and second conductive
regions from a conductive feature within said dielectric material.
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