| US 7,569,405 B2 | ||
| Method of manufacturing light emitting device | ||
| Shunpei Yamazaki, Tokyo (Japan); Takashi Hamada, Kanagawa (Japan); and Satoshi Seo, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Jan. 11, 2007, as Appl. No. 11/652,284. | ||
| Application 11/652284 is a continuation of application No. 11/036299, filed on Jan. 14, 2005, granted, now 7,163,836. | ||
| Application 11/036299 is a continuation of application No. 10/464798, filed on Jun. 18, 2003, granted, now 6,858,464, filed on Feb. 22, 2005. | ||
| Claims priority of application No. 2002-179078 (JP), filed on Jun. 19, 2002; and application No. 2002-189409 (JP), filed on Jun. 28, 2002. | ||
| Prior Publication US 2007/0122937 A1, May 31, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—22 [438/29; 438/30; 257/40] | 17 Claims |
| 1. A method for manufacturing a display device comprising:
forming a first electrode over a surface of a substrate;
depositing a light emitting layer over the first electrode by an ink jet method; and
forming a second electrode by a sputtering method,
wherein the surface of the substrate is arranged to be approximately perpendicular with respect to a horizontal plane in the
depositing step and the sputtering step.
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