| US 7,569,400 B2 | ||
| Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory | ||
| Takeshi Kijima, Matsumoto (Japan); Yasuaki Hamada, Suwa (Japan); Tomokazu Kobayashi, Suwa (Japan); and Hiromu Miyazawa, Azumino (Japan) | ||
| Assigned to Seiko Epson Corporation, (Japan) | ||
| Filed on Dec. 22, 2005, as Appl. No. 11/316,168. | ||
| Claims priority of application No. 2004-376701 (JP), filed on Dec. 27, 2004. | ||
| Prior Publication US 2006/0138507 A1, Jun. 29, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—3 [257/E21.664] | 7 Claims |
| 1. A method of manufacturing a ferroelectric film including a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3,
B including at least one of Zr and Ti;
X including at least one of Nb and Ta;
“a” being in a range of “0.05≤a≤0.4”;
“d” being in a range of “0<d<1”; and
the method comprising:
mixing a sol-gel raw material including a hydrolysis-condensation product of a metal alkoxide containing at least Zr and Ti,
a polycarboxylic acid or a polycarboxylic acid ester, and an organic solvent; and
forming a ferroelectric precursor solution including an ester bond by esterification of the polycarboxylic acid or a polycarboxylic
acid derived from the polycarboxylic acid ester and the metal alkoxide.
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