| US 7,569,310 B2 | ||
| Sub-resolution assist features for photolithography with trim ends | ||
| Charles H. Wallace, Portland, Oreg. (US); and Chiou-hung Jang, Hillsboro, Oreg. (US) | ||
| Assigned to Intel Corporation, Santa Clara, Calif. (US) | ||
| Filed on Dec. 07, 2005, as Appl. No. 11/296,983. | ||
| Prior Publication US 2007/0128525 A1, Jun. 07, 2007 | ||
| Int. Cl. G03F 1/00 (2006.01); H01L 21/00 (2006.01); G06F 17/50 (2006.01) | ||
| U.S. Cl. 430—5 [430/311; 716/20; 716/21] | 18 Claims |
| 1. A method comprising:
synthesizing a photolithography mask having elongated features;
applying a sub-resolution assist feature to an end-to-end gap between the elongated features;
applying trim to the ends of the sub-resolution assist feature, the trim connecting the sub-resolution assist feature to an
end of a main feature, the trim having a narrower width than the remaining portion of the sub-resolution assist feature; and
modifying the synthesized photolithography mask to include the sub-resolution assist feature and trim.
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