| US 7,569,111 B2 | ||
| Method of cleaning deposition chamber | ||
| Chien-Hsin Lai, Kao-Hsiung Hsien (Taiwan); and Chun-Yi Wang, Chang-Hua Hsien (Taiwan) | ||
| Assigned to United Microelectronics Corp., Hsin-Chu (Taiwan) | ||
| Filed on Apr. 19, 2006, as Appl. No. 11/379,227. | ||
| Prior Publication US 2007/0246062 A1, Oct. 25, 2007 | ||
| Int. Cl. B08B 3/12 (2006.01); B08B 6/00 (2006.01) | ||
| U.S. Cl. 134—1 [134/1.1; 134/1.2; 134/1.3] | 14 Claims |
| 1. A method for cleaning a deposition chamber, comprising:
feeding a fluorine-containing gas into the deposition chamber;
maintaining the fluorine-containing gas in the deposition chamber at a first pressure;
providing RF power to ignite plasma of the fluorine-containing gas within the deposition chamber;
keeping the deposition chamber at a first temperature for a time period with the presence of the plasma;
turning off the RF power to cease the plasma; and
thereafter, feeding a remote plasma containing free fluorine from a remote plasma source into the deposition chamber at the
first temperature to clean interior surfaces of the deposition chamber.
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