| US 7,568,970 B2 | ||
| Chemical mechanical polishing pads | ||
| Dapeng Wang, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Jun. 05, 2006, as Appl. No. 11/447,741. | ||
| Application 10/729112 is a division of application No. 09/617692, filed on Jul. 17, 2000, granted, now 6,666,751, filed on Dec. 23, 2003. | ||
| Application 11/447741 is a continuation of application No. 10/729112, filed on Dec. 05, 2003, granted, now 7,186,168, filed on Mar. 06, 2007. | ||
| Prior Publication US 2006/0229008 A1, Oct. 12, 2006 | ||
| Int. Cl. B24B 7/22 (2006.01) | ||
| U.S. Cl. 451—288 [451/533] | 8 Claims |
| 1. A pad for chemical mechanical polishing comprising:
a polishing layer; and
a deformable layer attached to the polishing layer, the deformable layer comprising a plurality of laterally isolated, compressibly
deformable solid supports, at least one of a size of the solid supports, a shape of the solid supports, a density of the solid
supports, an elasticity of the solid supports, a material composition of the solid supports, and a distribution of the solid
supports in the deformable layer varying in at least one direction parallel to a polishing surface of the polishing layer,
wherein the deformable layer further comprises a ventral and a dorsal layer.
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