| US 7,567,598 B2 | ||
| Semiconductor laser equipment | ||
| Hirofumi Miyajima, Hamamatsu (Japan); and Hirofumi Kan, Hamamatsu (Japan) | ||
| Assigned to Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka (Japan) | ||
| Appl. No. 10/593,033 PCT Filed Mar. 08, 2005, PCT No. PCT/JP2005/003979 § 371(c)(1), (2), (4) Date May 08, 2008, PCT Pub. No. WO2005/088788, PCT Pub. Date Sep. 22, 2005. |
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| Claims priority of application No. P2004-076942 (JP), filed on Mar. 17, 2004. | ||
| Prior Publication US 2008/0247432 A1, Oct. 09, 2008 | ||
| Int. Cl. H01S 3/04 (2006.01) | ||
| U.S. Cl. 372—35 [372/34; 372/36] | 6 Claims |
| 1. A semiconductor laser apparatus, comprising:
a semiconductor laser array;
a heat sink on which said semiconductor laser array is mounted;
a refrigerant including fluorocarbon and flowing inside said heat sink;
a refrigerant supplier for supplying the refrigerant to said heat sink;
an insulating piping connected between said heat sink and said refrigerant supplier, and flowing the refrigerant inside said
piping; and
a conductive material arranged in said insulating piping in a grounded state.
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