| US 7,567,422 B2 | ||
| Plasma processing apparatus and plasma processing method | ||
| Hiroyuki Kitsunai, Kasumigaura (Japan); Seiichiro Kanno, Kodaira (Japan); and Tsunehiko Tsubone, Hikari (Japan) | ||
| Assigned to Hitachi High-Technologies Corporation, Tokyo (Japan) | ||
| Filed on Aug. 31, 2005, as Appl. No. 11/214,861. | ||
| Claims priority of application No. 2005-232608 (JP), filed on Aug. 10, 2005. | ||
| Prior Publication US 2007/0035908 A1, Feb. 15, 2007 | ||
| Int. Cl. H01T 23/00 (2006.01) | ||
| U.S. Cl. 361—234 [361/230] | 7 Claims |
| 1. A plasma processing apparatus comprising:
a processing chamber that plasma-processes a processed substrate;
a plasma generating unit that generates plasma in the processing chamber;
a wafer stage which is mounted in the processing chamber and has an electrostatic chuck for holding the processed substrate;
a DC power supply that applies an electrostatic attraction voltage to the electrostatic chuck;
a current detector that detects a current value of leakage current flowing between the electrostatic chuck and the processed
substrate; and
an applied voltage controlling unit which sets a plurality of values of the leakage current during a substrate processing
time, and which sets a plurality of attraction conditions of the processed substrate to the leakage current values to control
the voltage applied to the electrostatic chuck and the applied time so that the leakage current has the set current values;
and
an attraction characteristic acquiring unit that acquires and stores a relationship between the leakage current and the applied
voltage during the processing and displays the result.
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