US 7,566,964 B2
Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures
Seung H. Kang, Macungie, Pa. (US); Roland P. Krebs, Allentown, Pa. (US); Kurt George Steiner, Fogelsville, Pa. (US); Michael C. Ayukawa, Zionsville, Pa. (US); and Sailesh Mansinh Merchant, Breinigsville, Pa. (US)
Assigned to Agere Systems Inc., Allentown, Pa. (US)
Filed on Sep. 30, 2003, as Appl. No. 10/675,258.
Claims priority of provisional application 60/462504, filed on Apr. 10, 2003.
Prior Publication US 2004/0201101 A1, Oct. 14, 2004
Int. Cl. H01L 23/52 (2006.01)
U.S. Cl. 257—691  [257/668; 257/701; 257/750; 257/765; 257/E21.591] 7 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
a metallization interconnect system overlying a semiconductor substrate, the metallization interconnect system including at least a first and a second interconnect feature located within a dielectric layer;
a power bus located over the metallization interconnect system, the power bus comprising an alloy of aluminum and copper, and further wherein the power bus includes a first contact pad region configured for connection external to the integrated circuit device that is in contact with the first interconnect feature, and a second region in contact with the second interconnect feature; and
a passivation layer overlying at least a portion of the power bus to expose at least a portion of the first contact pad region and protect the second region.