US 7,566,938 B2
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
Cyril Cabral, Jr., Ossining, N.Y. (US); Alessandro C. Callegari, Yorktown Heights, N.Y. (US); Michael A. Gribelyuk, Poughquag, N.Y. (US); Paul C. Jamison, Hopewell Junction, N.Y. (US); Dianne L. Lacey, Mahopac, N.Y. (US); Fenton R. McFeely, Ossining, N.Y. (US); Vijay Narayanan, New York, N.Y. (US); Deborah A. Neumayer, Danbury, Conn. (US); Pushkar Ranade, Hillsboro, Oreg. (US); and Sufi Zafar, Briarcliff Manor, N.Y. (US)
Assigned to International Business Machines Corporation, Armonk, N.Y. (US)
Filed on Nov. 17, 2005, as Appl. No. 11/281,032.
Application 11/281032 is a division of application No. 10/291334, filed on Nov. 08, 2002, granted, now 6,982,230.
Prior Publication US 2006/0138603 A1, Jun. 29, 2006
Int. Cl. H01L 29/76 (2006.01)
U.S. Cl. 257—411  [257/310; 257/E29.164] 13 Claims
OG exemplary drawing
 
1. A microcrystalline film comprising hafnium oxide and/or zirconium oxide, said film comprising no C and OH and having a grain size of about 10 nm or less.