| US 7,566,661 B2 | ||
| Electroless treatment of noble metal barrier and adhesion layer | ||
| Adrien R. Lavoie, 6670 SW. 169th Ave., Beaverton, Oreg. 97007 (US) | ||
| Filed on May 22, 2006, as Appl. No. 11/438,793. | ||
| Prior Publication US 2007/0269981 A1, Nov. 22, 2007 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—681 [438/650; 438/676; 438/678; 438/686; 257/E23.162; 257/E23.021; 257/E21.074; 257/E21.584] | 5 Claims |
| 1. A method comprising:
providing a semiconductor substrate in a reaction chamber, wherein the semiconductor substrate includes a trench etched into
a dielectric layer;
pulsing an organometallic precursor containing a noble metal into the reaction chamber proximate to the semiconductor substrate;
pulsing a disrupting plasma species into the reaction chamber proximate to the semiconductor substrate;
pulsing a co-reactant species into the reaction chamber proximate to the semiconductor substrate, wherein the organometallic
precursor, the disrupting plasma species, and the co-reactant species form an amorphous noble metal layer directly on the
dielectric layer;
placing the semiconductor substrate in an electroless plating bath;
using an electroless plating process to deposit a copper seed layer onto the amorphous noble metal layer; and
removing the semiconductor substrate from the plating bath.
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