| US 7,566,657 B2 | ||
| Methods of forming through-substrate interconnects | ||
| Theodore I. Kamins, Palo Alto, Calif. (US) | ||
| Assigned to Hewlett-Packard Development Company, L.P., Houston, Tex. (US) | ||
| Filed on Jan. 17, 2007, as Appl. No. 11/654,338. | ||
| Prior Publication US 2008/0171430 A1, Jul. 17, 2008 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—667 [438/677; 257/E21.159; 257/E21.161; 977/890; 977/892] | 18 Claims |
| 1. A method of forming at least one through-substrate interconnect, comprising:
providing a semiconductor substrate having a first surface and an opposing second surface;
forming at least one opening in the semiconductor substrate, the at least one opening extending from the first surface to
an intermediate depth within the semiconductor substrate, the at least one opening partially defined by a base;
providing at least one metal-catalyst nanoparticle on the base instead of the sidewalls;
growing conductive material within the at least one opening under conditions in which the metal-catalyst nanoparticle promotes
deposition of the conductive material onto the base; and
removing material of the semiconductor substrate from the second surface to expose a portion of the conductive material filling
the at least one opening.
|