| US 7,566,586 B2 | ||
| Method of manufacturing a semiconductor device | ||
| Norio Kainuma, Kawasaki (Japan); Hidehiko Kira, Kawasaki (Japan); Kenji Kobae, Kawasaki (Japan); Kimio Nakamura, Kawasaki (Japan); Kuniko Ishikawa, Kawasaki (Japan); and Yukio Ozaki, Kawasaki (Japan) | ||
| Assigned to Fujitsu Limited, Kawasaki (Japan) | ||
| Filed on Dec. 06, 2006, as Appl. No. 11/634,119. | ||
| Claims priority of application No. 2006-132967 (JP), filed on May 11, 2006. | ||
| Prior Publication US 2007/0264752 A1, Nov. 15, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—108 [257/E21.503] | 11 Claims |
| 1. A method of manufacturing a semiconductor device comprising:
a bonding step of flip-chip bonding electrode terminals of a substrate and electrode terminals of a semiconductor chip by
solid-phase diffusion;
an underfill filling step of filling a gap between the substrate and the semiconductor chip with an underfill material composed
of thermosetting resin; and
an underfill hardening step of heating the underfill material to a hardening temperature to harden the underfill material,
wherein in the underfill hardening step, a member with a lower coefficient of thermal expansion out of the substrate and the
semiconductor chip is heated to a higher temperature than the other member out of the substrate and the semiconductor chip.
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