| US 7,402,907 B2 | ||
| Semiconductor device and manufacturing method thereof | ||
| Tatsuya Ohguro, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Oct. 19, 2005, as Appl. No. 11/252,882. | ||
| Claims priority of application No. 2005-186854 (JP), filed on Jun. 27, 2005. | ||
| Prior Publication US 2006/0292729 A1, Dec. 28, 2006 | ||
| Int. Cl. H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01) | ||
| U.S. Cl. 257—734 [438/48; 257/618] | 11 Claims |
| 1. A semiconductor device, comprising:
a semiconductor substrate;
an actuator provided above the semiconductor substrate to move upwardly;
a first electrode layer which is moved by the actuator; and
a cap portion provided above the first electrode layer, configured to seal the actuator and the first electrode layer, and
including a second electrode layer which faces the first electrode layer,
wherein a cavity is provided between the semiconductor substrate and the actuator.
|