a plurality of semiconductor chips, at least one of the semiconductor chips including:

a semiconductor substrate;

a plurality of diffusion layer patterns formed on the semiconductor substrate;

an insulation film formed between the diffusion layer patterns on the semiconductor substrate to isolate the diffusion layer patterns from one another;

a pattern portion formed above the diffusion layer patterns and/or the insulation film, the pattern portion using as a material thereof one kind selected from a group consisting of aluminum (Al), tungsten (W), titanium (Ti), copper (Cu), tantalum (Ta), and a chemical compound composed of at least one metal out of aluminum (Al), tungsten (W), titanium (Ti), copper (Cu), and tantalum (Ta); and

a through plug formed to have a side surface being in contact with the insulation film, the side surface being surrounded by the insulation film without being in contact with the diffusion layer patterns, and to pass through the insulation film and the semiconductor substrate, the through plug being partly surrounded by the pattern portion above the diffusion layer patterns and/or the insulation film and being insulated from the pattern portion, or a through plug formed to have a side surface being in contact with one of the diffusion layer patterns, the side surface being surrounded by the one of the diffusion layer patterns without being in contact with the insulation film, and to pass through the one of the diffusion layer patterns and the semiconductor substrate; and

a connecting member electrically connecting the through plugs of the at least one of the semiconductor chips to at least one of the semiconductor chips.