| US 7,402,521 B2 | ||
| Method for chemically mechanically polishing organic film, method of manufacturing semiconductor device, and program therefor | ||
| Yukiteru Matsui, Yokohama (Japan); Gaku Minamihaba, Yokohama (Japan); Atsushi Shigeta, Fujisawa (Japan); and Hiroyuki Yano, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on May 05, 2006, as Appl. No. 11/418,070. | ||
| Claims priority of application No. 2005-193001 (JP), filed on Jun. 30, 2005. | ||
| Prior Publication US 2007/0000872 A1, Jan. 04, 2007 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—692 [438/691; 438/693; 156/345.12] | 20 Claims |
| 1. A polishing method comprising:
feeding a slurry onto a polishing pad;
press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having
an organic film thereon; and
chemically mechanically polishing the organic film by repeating a sequence of rotation and halt of rotation of the polishing
pad and the polishing head while feeding the slurry on the polishing pad, during repeating the sequence, the semiconductor
substrate being kept press-contacted with the polishing pad.
|