| US 7,402,497 B2 | ||
| Transistor device having an increased threshold stability without drive current degradation | ||
| Andy Wei, Dresden (Germany); Thorsten Kammler, Ottendorf-Okrilla (Germany); Jan Hoentschel, Dresden (Germany); and Manfred Horstmann, Duerrrhoehrsdorf-Ditterbach (Germany) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on Oct. 20, 2006, as Appl. No. 11/551,263. | ||
| Claims priority of application No. 10 2006 009 226 (DE), filed on Feb. 28, 2006. | ||
| Prior Publication US 2007/0202641 A1, Aug. 30, 2007 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—300 [257/E21.618; 257/E21.633] | 19 Claims |
| 1. A method, comprising:
forming a recess adjacent to a channel region of a field effect transistor;
forming a doped region in said recess by an epitaxial growth process, said doped region comprising a first dopant species
of a first conductivity type;
replacing a portion of said doped region by a semiconductor material; and
introducing a second dopant species of a second conductivity type other than said first conductivity type into said semiconductor
material so as to form a PN junction with said first dopant species adjacent to said channel region.
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