| US 7,402,467 B1 | ||
| Method of manufacturing a semiconductor device | ||
| Masaya Kadono, Kanagawa (Japan); Shunpei Yamazaki, Tokyo (Japan); Yukio Yamauchi, Shizuoka (Japan); and Hidehito Kitakado, Hyogo (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Mar. 24, 2000, as Appl. No. 9/535,233. | ||
| Claims priority of application No. 11-084989 (JP), filed on Mar. 26, 1999. | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/84 (2006.01) | ||
| U.S. Cl. 438—151 [438/704; 257/E21.561] | 32 Claims |
| 1. A method of manufacturing a semiconductor device, comprising steps of:
forming a semiconductor film over a substrate having an insulating surface;
forming a patterned resist mask over said semiconductor film;
patterning said semiconductor film to form at least one semiconductor island;
removing the patterned resist mask located over said semiconductor island;
spinning the substrate after removing the patterned resist mask;
applying an etching solution to a surface of said semiconductor island and scattering the etching solution during said spinning,
thereby contaminating impurities are removed from the surface of the semiconductor island by the step of applying the etching
solution; and then
forming a gate insulating film in contact with the semiconductor film from the surface of which the contaminating impurity
has been removed.
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