US 11,707,005 B2
Chalcogenide material, variable resistance memory device and electronic device
Gwang Sun Jung, Cheongju (KR); Sang Hyun Ban, Hwaseong (KR); Jun Ku Ahn, Hwaseong (KR); Beom Seok Lee, Suwon (KR); Young Ho Lee, Seongnam (KR); Woo Tae Lee, Seoul (KR); Jong Ho Lee, Seoul (KR); Hwan Jun Zang, Icheon (KR); Sung Lae Cho, Gwacheon (KR); Ye Cheon Cho, Icheon (KR); and Uk Hwang, Yongin (KR)
Assigned to SK hynix Inc., Icheon (KR)
Filed by SK hynix Inc., Icheon (KR)
Filed on Apr. 22, 2020, as Appl. No. 16/855,760.
Claims priority of application No. 10-2019-0114181 (KR), filed on Sep. 17, 2019.
Prior Publication US 2021/0083185 A1, Mar. 18, 2021
Int. Cl. H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01)
CPC H10N 70/8825 (2023.02) [G11C 13/003 (2013.01); H10B 63/24 (2023.02); H10N 70/841 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A chalcogenide material in an amorphous state comprising:
germanium (Ge), arsenic (As), selenium (Se) and from 0.5 at % to 3 at % of at least one group 13 element,
wherein a sum of a concentration of the germanium (Ge), a concentration of the arsenic (As) and a concentration of the selenium (Se) is from 97 at % to 99.5 at %.