CPC H10N 50/80 (2023.02) [H10B 61/22 (2023.02); H10N 50/85 (2023.02)] | 18 Claims |
1. An electric field-controlled magnetoresistive random-access memory (MRAM) comprising at least one one-bit memory cell having a heterogeneous tunnel junction structure composed of a first tunnel junction and a second tunnel junction, wherein:
the first tunnel junction comprises:
a first magnetic layer having a fixed magnetization direction;
a second magnetic layer having a variable magnetization direction that changes according to spin transfer torque when a voltage is applied to the first tunnel junction, thereby providing magnetic information; and
a first insulating layer provided between the first magnetic layer and the second magnetic layer and serving as a tunnel barrier;
the second tunnel junction comprises:
the second magnetic layer; and
a second insulating layer provided on one surface of the second magnetic layer;
the first and second tunnel junctions share the second magnetic layer;
the second tunnel junction has only one magnetic layer being the second magnetic layer;
the one-bit memory cell has only two magnetic layers being the first magnetic layer and the second magnetic layer, and
the second insulating layer is formed of a ferroelectric material configured to undergo spontaneous electric polarization when an electric field is applied thereto to control an electric field applied to the second magnetic layer and induce a change in magnetic anisotropy in the second magnetic layer.
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