CPC H10B 53/00 (2023.02) [H01G 4/008 (2013.01); H01G 4/08 (2013.01); H01G 4/33 (2013.01); H01G 4/40 (2013.01); H01L 28/40 (2013.01); H01L 28/75 (2013.01); H10B 12/033 (2023.02); H10B 53/30 (2023.02); H10B 12/30 (2023.02)] | 17 Claims |
1. A memory array comprising a plurality of memory cells, each of the memory cells comprising:
a select device; and
a capacitor coupled to the select device, the capacitor comprising a first electrode and a second electrode, the capacitor having a first current leakage path between the first electrode and the second electrode through ferroelectric material, the capacitor having a second current leakage path between the first electrode and the second electrode through an amorphous semiconducting material, the ferroelectric material comprising one or more materials selected from the group consisting of zirconium, zirconium oxide, hafnium, barium strontium titanate, HfxSiyOz and HfxZryOz, wherein the one or more materials is optionally doped with a dopant comprising one or more member of the group consisting of silicon, aluminum, lanthanum, yttrium, erbium, calcium, magnesium, strontium and rare earth elements.
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