CPC H04N 23/67 (2023.01) [H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14689 (2013.01); H04N 23/10 (2023.01); H04N 25/133 (2023.01); H04N 25/134 (2023.01); H04N 25/702 (2023.01); H04N 25/704 (2023.01)] | 20 Claims |
1. An image sensor, comprising:
a semiconductor substrate comprising sensing pixels, each sensing pixel comprising a first sub-pixel, a second sub-pixel and a pair of third sub-pixels with phase detection function;
color filters disposed over the sensing pixels;
lenses covering the color filters; and
a grid structure disposed between the color filters and located over the isolation structures, wherein the grid structure comprises:
a shielding grid layer; and
a dielectric grid layer covering the shielding grid layer, wherein the color filters are space apart from each other by the grid structure.
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