US 11,705,880 B2
Process for producing a micro-electro-mechanical system from a transferred piezoelectric or ferroelectric layer
Alexandre Reinhardt, Grenoble (FR); Marie Bousquet, Grenoble (FR); and Ausrine Bartasyte, Le Duc (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); UNIVERSITE DE FRANCHE-COMTE, Besançon (FR); and ECOLE NATIONALE SUPERIEURE DE MECANIQUE ET DES MICROTECHNIQUES, Besançon (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); UNIVERSITE DE FRANCHE-COMTE, Besancon (FR); and ECOLE NATIONALE SUPERIEURE DE MECANIQUE ET DES MICROTECHNIQUES, Besancon (FR)
Filed on Feb. 25, 2020, as Appl. No. 16/801,051.
Claims priority of application No. 1902226 (FR), filed on Mar. 5, 2019.
Prior Publication US 2020/0287511 A1, Sep. 10, 2020
Int. Cl. H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H10N 30/072 (2023.01)
CPC H03H 3/02 (2013.01) [H03H 9/02031 (2013.01); H03H 9/02228 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/176 (2013.01); H10N 30/072 (2023.02); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A process for fabricating a micro-electro-mechanical system, comprising the following steps:
production of a stack on the surface of a temporary substrate so as to produce a first assembly, comprising:
at least depositing a piezoelectric material or a ferroelectric material to produce a layer of piezoelectric material or of ferroelectric material;
producing a first bonding layer;
production of a second assembly comprising at least producing a second bonding layer on the surface of a host substrate;
production of at least one acoustic isolation structure in at least one of the two assemblies;
production of at least one electrode level containing one or more electrodes in at least one of the two assemblies;
bonding said two assemblies via said two bonding layers such that said acoustic isolation structure is between said host substrate and layer of piezoelectric material or of ferroelectric material, before or after the production of the at least one electrode level in at least one of the two assemblies;
removing said temporary substrate, wherein the process comprises:
producing a sacrificial layer above a dielectric material;
structuring said sacrificial layer so as to define a sacrificial layer structure;
depositing a dielectric above said sacrificial layer structure;
removing said sacrificial layer structure so as to define said acoustic isolation structure.