US 11,705,690 B2
Dual junction fiber-coupled laser diode and related methods
Devin Earl Crawford, Holzkirchen (DE); Prabhu Thiagarajan, Tucson, AZ (US); and Mark McElhinney, Marana, AZ (US)
Assigned to LEONARDO ELECTRONICS US INC., Tucson, AZ (US)
Filed by LEONARDO ELECTRONICS US INC., Tucson, AZ (US)
Filed on May 12, 2021, as Appl. No. 17/318,907.
Application 17/318,907 is a division of application No. 15/363,874, filed on Nov. 29, 2016, granted, now 11,025,031.
Prior Publication US 2021/0265810 A1, Aug. 26, 2021
Int. Cl. H01S 5/02253 (2021.01); H01S 5/40 (2006.01); H01S 5/02251 (2021.01); H01S 5/10 (2021.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01); H01S 5/32 (2006.01); H01S 5/20 (2006.01); H01S 5/00 (2006.01); H01S 5/065 (2006.01); H01S 5/22 (2006.01)
CPC H01S 5/02253 (2021.01) [H01S 5/02251 (2021.01); H01S 5/1028 (2013.01); H01S 5/305 (2013.01); H01S 5/3095 (2013.01); H01S 5/34 (2013.01); H01S 5/4043 (2013.01); H01S 5/005 (2013.01); H01S 5/0655 (2013.01); H01S 5/2063 (2013.01); H01S 5/22 (2013.01); H01S 5/2214 (2013.01); H01S 5/3211 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A fiber-coupled laser diode device comprising:
a first guiding layer connected to a second guiding layer in a single epitaxial structure, each of the first and second guiding layers having an active layer;
a tunnel junction positioned between the first and second guiding layers, the tunnel junction formed from two thin, heavily doped layers positioned in contact with one another; and
a common vertical waveguide shared by the active layers of the first and second guiding layers, the common vertical waveguide formed from the first guiding layer in contact with one of the two thin, heavily doped layers and the second guiding layer positioned in contact with another of the two thin, heavily doped layers.