US 11,705,545 B2
Light-emitting device
Hsin-Ying Wang, Hsinchu (TW); Chih-Hao Chen, Hsinchu (TW); Chien-Chih Liao, Hsinchu (TW); Chao-Hsing Chen, Hsinchu (TW); Wu-Tsung Lo, Hsinchu (TW); Tsun-Kai Ko, Hsinchu (TW); and Chen Ou, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on May 3, 2021, as Appl. No. 17/306,141.
Claims priority of provisional application 63/019,948, filed on May 4, 2020.
Prior Publication US 2021/0343913 A1, Nov. 4, 2021
Int. Cl. H01L 33/60 (2010.01); H01L 33/46 (2010.01); H01L 33/54 (2010.01); H01L 33/56 (2010.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01); H01L 33/08 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/60 (2013.01) [H01L 33/38 (2013.01); H01L 33/46 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a substrate, comprising a sidewall, a first top surface and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate;
a semiconductor stack formed on the substrate, the semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, wherein the first semiconductor layer comprises a first mesa continuously surrounding a periphery of the semiconductor stack;
a dicing street surrounding the semiconductor stack and exposing the first top surface and the second top surface of the substrate;
a protective layer covering the semiconductor stack;
a reflective layer comprising a Distributed Bragg Reflector structure, covering the protective layer and the first mesa, wherein the reflective layer does not contact the first mesa; and
a cap layer, covering the reflective layer,
wherein the first top surface and the second top surface of the substrate are not covered by the reflective layer, and
wherein the cap layer does not contact the substrate.