CPC H01L 33/36 (2013.01) [H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 33/14 (2013.01); H01L 33/20 (2013.01)] | 20 Claims |
1. An optoelectronic device, comprising:
a semiconductor stack, comprising a top surface;
a current blocking region, comprising a first pad portion formed on the semiconductor stack and wherein the current blocking region comprises transparent insulated material;
a first opening, formed in the first pad portion, exposing the top surface of the semiconductor stack;
a transparent conductive layer, covering the top surface of the semiconductor stack, comprising a second opening overlapping the first opening; and
a first electrode, formed on the semiconductor stack, comprising a first pad electrode formed above the first pad portion of the current blocking region;
wherein the first pad electrode contacts the semiconductor stack through the first opening and the second opening; and
wherein the first opening comprises a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 10% and 40%.
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