US 11,705,519 B2
Semiconductor device and manufacturing method thereof
Cheng-Yen Yu, New Taipei (TW); Che-Cheng Chang, New Taipei (TW); Tung-Wen Cheng, New Taipei (TW); Zhe-Hao Zhang, Hsinchu (TW); and Bo-Feng Young, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 21, 2021, as Appl. No. 17/353,597.
Application 15/402,398 is a division of application No. 14/749,597, filed on Jun. 24, 2015, granted, now 9,564,528, issued on Feb. 7, 2017.
Application 17/353,597 is a continuation of application No. 16/594,237, filed on Oct. 7, 2019, granted, now 11,043,593, issued on Jun. 22, 2021.
Application 16/594,237 is a continuation of application No. 16/056,148, filed on Aug. 6, 2018, granted, now 10,483,394, issued on Nov. 19, 2019.
Application 16/056,148 is a continuation of application No. 15/402,398, filed on Jan. 10, 2017, granted, now 10,043,906, issued on Aug. 7, 2018.
Claims priority of provisional application 62/104,066, filed on Jan. 15, 2015.
Prior Publication US 2021/0313468 A1, Oct. 7, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/267 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/267 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first fin structure disposed over a substrate and extending in a first direction;
an isolation insulating layer disposed over the substrate; and
a first source/drain epitaxial layer and disposed on the first fin structure, wherein:
in a cross section along a second direction crossing the first direction, an interface between the first source/drain epitaxial layer and the first fin structure has a rounded convex shape toward the first fin structure.