CPC H01L 29/7848 (2013.01) [H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/267 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a first fin structure disposed over a substrate and extending in a first direction;
an isolation insulating layer disposed over the substrate; and
a first source/drain epitaxial layer and disposed on the first fin structure, wherein:
in a cross section along a second direction crossing the first direction, an interface between the first source/drain epitaxial layer and the first fin structure has a rounded convex shape toward the first fin structure.
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