CPC H01L 29/7846 (2013.01) [H01L 21/761 (2013.01); H01L 21/762 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/6681 (2013.01); H01L 29/66553 (2013.01); H01L 29/7853 (2013.01)] | 20 Claims |
1. An integrated circuit structure, comprising:
a semiconductor nanowire;
an oxide nanowire laterally adjacent to the semiconductor nanowire;
an epitaxial source or drain structure laterally between and in contact with the semiconductor nanowire and the oxide nanowire;
a first gate structure surrounding the semiconductor nanowire; and
a second gate structure surrounding the oxide nanowire.
|