US 11,705,517 B2
Nanosheet transistors with strained channel regions
Xin Miao, Slingerlands, NY (US); Kangguo Cheng, Schenectady, NY (US); Wenyu Xu, Albany, NY (US); and Chen Zhang, Albany, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 29, 2020, as Appl. No. 17/136,185.
Application 17/136,185 is a division of application No. 16/269,094, filed on Feb. 6, 2019, granted, now 10,957,798.
Prior Publication US 2021/0151601 A1, May 20, 2021
Int. Cl. H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01)
CPC H01L 29/7843 (2013.01) [H01L 21/0217 (2013.01); H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 27/0924 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/31116 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a nanosheet stack formed on a substrate, the nanosheet stack comprising nanosheet channels;
source and drain regions formed on the substrate;
a gate around the nanosheet stack;
a spacer formed on a sidewall of the gate;
an inter-layer dielectric formed adjacent to the spacer; and
a trench formed in a portion of the gate, the spacer, and the inter-level dielectric and extending toward the substrate, wherein the trench is filled with a strained material.