US 11,705,505 B2
Gate spacer structure and method of forming same
Wei-Ting Chien, Hsinchu (TW); Liang-Yin Chen, Hsinchu (TW); Yi-Hsiu Liu, Taipei (TW); Tsung-Lin Lee, Hsinchu (TW); and Huicheng Chang, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 9, 2022, as Appl. No. 17/818,400.
Application 17/818,400 is a continuation of application No. 17/120,869, filed on Dec. 14, 2020, granted, now 11,508,831, issued on Nov. 22, 2022.
Application 17/120,869 is a continuation of application No. 16/245,442, filed on Jan. 11, 2019, granted, now 10,868,142, issued on Dec. 15, 2020.
Claims priority of provisional application 62/753,139, filed on Oct. 31, 2018.
Prior Publication US 2022/0384606 A1, Dec. 1, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 21/764 (2006.01); H01L 21/8234 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01)
CPC H01L 29/6656 (2013.01) [H01L 21/764 (2013.01); H01L 21/823468 (2013.01); H01L 21/823864 (2013.01); H01L 29/0649 (2013.01); H01L 29/42324 (2013.01); H01L 29/4991 (2013.01); H01L 29/515 (2013.01); H01L 29/6653 (2013.01); H01L 29/6659 (2013.01); H01L 29/66537 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/66825 (2013.01); H01L 29/785 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02115 (2013.01); H01L 21/02205 (2013.01); H01L 21/02274 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first gate structure over an active region;
depositing a first spacer layer along sidewalls and a top surface of the first gate structure;
doping an upper portion of the first spacer layer to form a first protection layer over an un-doped portion of the first spacer layer;
depositing a sacrificial layer over the first protection layer;
depositing a second spacer layer over the sacrificial layer; and
removing at least a portion of the sacrificial layer to form a gap between the first protection layer and the second spacer layer.