CPC H01L 29/6656 (2013.01) [H01L 21/764 (2013.01); H01L 21/823468 (2013.01); H01L 21/823864 (2013.01); H01L 29/0649 (2013.01); H01L 29/42324 (2013.01); H01L 29/4991 (2013.01); H01L 29/515 (2013.01); H01L 29/6653 (2013.01); H01L 29/6659 (2013.01); H01L 29/66537 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/66825 (2013.01); H01L 29/785 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02115 (2013.01); H01L 21/02205 (2013.01); H01L 21/02274 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01)] | 20 Claims |
1. A method comprising:
forming a first gate structure over an active region;
depositing a first spacer layer along sidewalls and a top surface of the first gate structure;
doping an upper portion of the first spacer layer to form a first protection layer over an un-doped portion of the first spacer layer;
depositing a sacrificial layer over the first protection layer;
depositing a second spacer layer over the sacrificial layer; and
removing at least a portion of the sacrificial layer to form a gap between the first protection layer and the second spacer layer.
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