US 11,705,480 B2
Optoelectronic device with electrodes forming an outer boundary beyond an outer boundary of an epitaxial stack
Chao Hsing Chen, Hsinchu (TW); Jia Kuen Wang, Hsinchu (TW); Chien Fu Shen, Hsinchu (TW); and Chun Teng Ko, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Apr. 29, 2022, as Appl. No. 17/733,262.
Application 17/733,262 is a continuation of application No. 17/064,769, filed on Oct. 7, 2020, granted, now 11,355,550.
Application 17/064,769 is a continuation of application No. 16/692,790, filed on Nov. 22, 2019, granted, now 10,825,860, issued on Nov. 3, 2020.
Application 16/692,790 is a continuation of application No. 16/031,737, filed on Jul. 10, 2018, granted, now 10,522,588, issued on Dec. 31, 2019.
Application 16/031,737 is a continuation of application No. 15/670,620, filed on Aug. 7, 2017, granted, now 10,056,429, issued on Aug. 21, 2018.
Application 15/670,620 is a continuation of application No. 15/330,883, filed on Nov. 7, 2016, granted, now 9,741,763, issued on Aug. 22, 2017.
Application 15/330,883 is a continuation of application No. 14/716,262, filed on May 19, 2015, granted, now 9,490,295, issued on Nov. 8, 2016.
Claims priority of application No. 103117570 (TW), filed on May 19, 2014.
Prior Publication US 2022/0262849 A1, Aug. 18, 2022
Int. Cl. H01L 27/15 (2006.01); H01L 33/64 (2010.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01)
CPC H01L 27/156 (2013.01) [H01L 25/0753 (2013.01); H01L 33/483 (2013.01); H01L 33/50 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/644 (2013.01); H01L 33/64 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An optoelectronic device, comprising:
an epitaxial stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer;
a trench exposing a portion of the first semiconductor layer;
a first insulating layer formed on a side wall of the trench to electrically insulate from the active layer and the second semiconductor layer;
a first electrode formed on the trench;
a second electrode formed on the second semiconductor layer;
a supporting device covering the epitaxial stack;
an optical layer covering the first electrode and the second electrode, comprising a plurality of openings corresponding to positions of the first electrodes and the second electrodes;
a fifth electrode electrically connected with the first electrode; and
a sixth electrode electrically connected with the second electrode,
wherein the fifth electrode and the sixth electrode each comprises a side comprising a length longer than that of an edge of the epitaxial stack, and the fifth electrode and the sixth electrode each comprises an outer boundary beyond an outer boundary of the epitaxial stack.