US 11,705,470 B2
Image sensor scheme for optical and electrical improvement
Sheng-Chan Li, Tainan (TW); Cheng-Hsien Chou, Tainan (TW); Cheng-Yuan Tsai, Chu-Pei (TW); Keng-Yu Chou, Kaohsiung (TW); and Yeur-Luen Tu, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Apr. 1, 2021, as Appl. No. 17/219,960.
Application 17/219,960 is a continuation of application No. 16/405,132, filed on May 7, 2019, granted, now 10,998,364.
Application 16/405,132 is a continuation of application No. 15/688,077, filed on Aug. 28, 2017, granted, now 10,319,768, issued on Jun. 11, 2019.
Prior Publication US 2021/0225919 A1, Jul. 22, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14629 (2013.01) [H01L 27/14607 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated chip, comprising:
a photodetector arranged within a semiconductor substrate;
one or more isolation structures arranged within one or more trenches defined by sidewalls of the semiconductor substrate arranged on opposing sides of the photodetector; and
wherein the one or more trenches extend from a first side of the semiconductor substrate to within the semiconductor substrate, wherein the one or more isolation structures respectively comprise a reflective medium including a metal configured to reflect electromagnetic radiation, and wherein the metal has a topmost surface and a bottommost surface that both extend between outermost sidewalls of the metal, the outermost sidewalls of the metal being directly and laterally between the sidewalls of the semiconductor substrate.