US 11,705,393 B2
Semiconductor device extension insulation
Hung-Chih Yu, Hsinchu (TW); and Chien-Mao Chen, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 30, 2021, as Appl. No. 17/363,691.
Application 16/738,936 is a division of application No. 15/664,990, filed on Jul. 31, 2017, granted, now 10,535,598.
Application 17/363,691 is a continuation of application No. 16/738,936, filed on Jan. 9, 2020, granted, now 11,056,428.
Prior Publication US 2021/0327808 A1, Oct. 21, 2021
Int. Cl. H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/78 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 21/76888 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/53266 (2013.01); H01L 29/78 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a plurality of vertical conductive structures, wherein each of the plurality of vertical conductive structures extends through an isolation layer; and
an insulated extension disposed horizontally between a first vertical conductive structure and a second vertical conductive structure of the plurality of vertical conductive structures, wherein the insulated extension comprises an insulation depth extending into a portion of the isolation layer between the first and second vertical conductive structure, wherein the insulated extension is separated from both the first and second vertical conductive structures.