US 11,705,375 B2
Etching apparatus and method
Bo-Ting Liao, Hsinchu (TW); Yung-Chang Jen, Hsinchu (TW); Tsung-Yi Tseng, Hsinchu (TW); Shao Yong Chen, Hsinchu (TW); Hsi Chung Chen, Hsinchu (TW); and Chih-Teng Liao, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,737.
Prior Publication US 2023/0062731 A1, Mar. 2, 2023
Int. Cl. H01L 21/66 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01)
CPC H01L 22/26 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32513 (2013.01); H01J 37/32935 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming an inner chamber in a process chamber of a plasma processing apparatus, the inner chamber having smaller volume than the process chamber;
introducing at least one gas into the inner chamber;
measuring flow of the at least one gas into the inner chamber;
adjusting the flow of the at least one gas to a desired rate; and
processing a wafer by the at least one gas at the desired rate while the inner chamber is not formed.