US 11,705,365 B2
Methods of micro-via formation for advanced packaging
Wei-Sheng Lei, San Jose, CA (US); Kurtis Leschkies, San Jose, CA (US); Roman Gouk, San Jose, CA (US); Giback Park, San Jose, CA (US); Kyuil Cho, Santa Clara, CA (US); Tapash Chakraborty, Maharashtra (IN); Han-Wen Chen, Cupertino, CA (US); and Steven Verhaverbeke, San Francisco, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 18, 2021, as Appl. No. 17/323,381.
Prior Publication US 2022/0375787 A1, Nov. 24, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/48 (2006.01)
CPC H01L 21/76825 (2013.01) [H01L 21/486 (2013.01); H01L 21/76877 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of forming a micro-via structure in a semiconductor device, comprising:
laminating a polymeric material layer over a conductive layer on the semiconductor device, wherein the semiconductor device comprises:
a substrate;
an insulating layer atop the substrate; and
the conductive layer atop the insulating layer;
depositing a metal mask layer over the polymeric material layer;
applying, patterning, and developing a resist layer over the metal mask layer, wherein developing the resist layer forms a trench in the resist layer corresponding to a desired lateral dimension of the micro-via structure;
etching the metal mask layer through the trench in the developed resist layer, wherein etching the metal mask layer extends the trench into the metal mask layer and exposes a portion of the polymeric material layer; and
laser ablating the exposed portion of the polymeric material layer using an ultraviolet (UV) laser in a pulse-burst mode and the pulse burst mode provides pulses at frequency of 50 MHz or more and an energy between 5 nJ and 10 nJ, wherein laser ablating the exposed portion of the polymeric material layer forms the micro-via structure therein having the desired lateral dimension and exposes the conductive layer.