US 11,705,335 B2
Conformal high concentration boron doping of semiconductors
Srinivas Gandikota, Santa Clara, CA (US); Abhijit Basu Mallick, Sunnyvale, CA (US); Swaminathan Srinivasan, Pleasanton, CA (US); Rui Cheng, Santa Clara, CA (US); Susmit Singha Roy, Campbell, CA (US); Gaurav Thareja, Santa Clara, CA (US); Mukund Srinivasan, Fremont, CA (US); and Sanjay Natarajan, Portland, OR (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 20, 2022, as Appl. No. 17/724,994.
Application 17/724,994 is a division of application No. 16/444,856, filed on Jun. 18, 2019, granted, now 11,328,928.
Claims priority of provisional application 62/686,623, filed on Jun. 18, 2018.
Prior Publication US 2022/0246432 A1, Aug. 4, 2022
Int. Cl. H01L 21/225 (2006.01); H01L 21/30 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/2257 (2013.01) [H01L 21/02043 (2013.01); H01L 21/02164 (2013.01); H01L 21/30 (2013.01); H01L 21/67167 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A processing system comprising:
a central transfer station having a robot therein;
a plurality of process chambers connected to the central transfer station, the plurality of process chambers comprising one or more of a pre-clean chamber, a deposition chamber, an annealing chamber or an etch chamber, the robot configured to move a substrate between the plurality of process chambers; and
a controller having a configuration to move a substrate on the robot between the plurality of processing chambers; a configuration to load and/or unload substrates from the system; a configuration to form a conformal buffer layer on a semiconductor surface of a semiconductor material on the substrate; a configuration to deposit a conformal amorphous boron-doped silicon layer on the buffer layer; and a configuration to anneal the substrate to diffuse boron atoms from the boron-doped silicon layer through the buffer layer to the semiconductor material,
wherein the boron-doped silicon layer has a boron concentration in a range of about 5 percent to about 40 percent boron on an atomic basis.