CPC H01L 21/2257 (2013.01) [H01L 21/02043 (2013.01); H01L 21/02164 (2013.01); H01L 21/30 (2013.01); H01L 21/67167 (2013.01)] | 20 Claims |
1. A processing system comprising:
a central transfer station having a robot therein;
a plurality of process chambers connected to the central transfer station, the plurality of process chambers comprising one or more of a pre-clean chamber, a deposition chamber, an annealing chamber or an etch chamber, the robot configured to move a substrate between the plurality of process chambers; and
a controller having a configuration to move a substrate on the robot between the plurality of processing chambers; a configuration to load and/or unload substrates from the system; a configuration to form a conformal buffer layer on a semiconductor surface of a semiconductor material on the substrate; a configuration to deposit a conformal amorphous boron-doped silicon layer on the buffer layer; and a configuration to anneal the substrate to diffuse boron atoms from the boron-doped silicon layer through the buffer layer to the semiconductor material,
wherein the boron-doped silicon layer has a boron concentration in a range of about 5 percent to about 40 percent boron on an atomic basis.
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