US 11,705,332 B2
Photoresist layer surface treatment, cap layer, and method of forming photoresist pattern
Yi-Chen Kuo, Taichung (TW); Chih-Cheng Liu, Hsinchu (TW); Ming-Hui Weng, New Taipei (TW); Jia-Lin Wei, Hsinchu (TW); Yen-Yu Chen, Taipei (TW); Jr-Hung Li, Chupei (TW); Yahru Cheng, Taipei (TW); Chi-Ming Yang, Hsinchu (TW); Tze-Liang Lee, Hsinchu (TW); and Ching-Yu Chang, Yilang County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jan. 15, 2021, as Appl. No. 17/150,403.
Claims priority of provisional application 63/026,695, filed on May 18, 2020.
Claims priority of provisional application 63/002,297, filed on Mar. 30, 2020.
Prior Publication US 2021/0305040 A1, Sep. 30, 2021
Int. Cl. H01L 21/00 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/0275 (2013.01) [H01L 21/0228 (2013.01); H01L 21/02362 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a pattern in a photoresist layer,
comprising:
forming a photoresist layer over a substrate,
wherein the photoresist layer comprises a metal-containing photoresist composition;
reducing moisture or oxygen absorption characteristics of the photoresist layer,
wherein the reducing moisture or oxygen absorption characteristics of the photoresist layer comprises performing a surface treatment to a surface of the photoresist layer, wherein the surface treatment comprises changing the surface of the photoresist layer from a hydrophilic surface to a hydrophobic surface;
selectively exposing the photoresist layer to actinic radiation to form a latent pattern; and
developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern.