CPC H01L 21/0228 (2013.01) [H01L 21/0214 (2013.01); H01L 21/02126 (2013.01); H01L 21/02205 (2013.01); H01L 21/02208 (2013.01); H01L 21/02211 (2013.01); H01L 21/31111 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 29/6656 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/76224 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/36 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01)] | 20 Claims |
1. A method comprising:
performing a first series of steps, the first series of steps comprising:
flowing a silicon source precursor over a gate structure;
flowing a carbon source precursor over the gate structure;
flowing oxygen over the gate structure at a first flow rate; and
flowing nitrogen over the gate structure at a second flow rate; and
performing a second series of steps after the first series of steps, the second series of steps comprising:
flowing the silicon source precursor over the gate structure;
flowing the carbon source precursor over the gate structure;
flowing the oxygen over the gate structure at a third flow rate different from the first flow rate; and
flowing the nitrogen over the gate structure at a fourth flow rate different from the second flow rate.
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