US 11,705,327 B2
Low-k feature formation processes and structures formed thereby
Wan-Yi Kao, Baoshan Township (TW); Chung-Chi Ko, Nantou (TW); Li Chun Te, Renwu Township (TW); Hsiang-Wei Lin, New Taipei (TW); Te-En Cheng, Taoyuan (TW); Wei-Ken Lin, Tainan (TW); Guan-Yao Tu, Hsinchu (TW); and Shu Ling Liao, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 4, 2022, as Appl. No. 17/712,561.
Application 17/201,691 is a division of application No. 16/422,574, filed on May 24, 2019, granted, now 10,950,431, issued on Mar. 16, 2021.
Application 16/422,574 is a division of application No. 15/952,895, filed on Apr. 13, 2018, granted, now 10,304,677, issued on May 28, 2019.
Application 17/712,561 is a continuation of application No. 17/201,691, filed on Mar. 15, 2021, granted, now 11,295,948.
Claims priority of provisional application 62/565,755, filed on Sep. 29, 2017.
Prior Publication US 2022/0230871 A1, Jul. 21, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H01L 29/36 (2006.01)
CPC H01L 21/0228 (2013.01) [H01L 21/0214 (2013.01); H01L 21/02126 (2013.01); H01L 21/02205 (2013.01); H01L 21/02208 (2013.01); H01L 21/02211 (2013.01); H01L 21/31111 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 29/6656 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/76224 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/36 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
performing a first series of steps, the first series of steps comprising:
flowing a silicon source precursor over a gate structure;
flowing a carbon source precursor over the gate structure;
flowing oxygen over the gate structure at a first flow rate; and
flowing nitrogen over the gate structure at a second flow rate; and
performing a second series of steps after the first series of steps, the second series of steps comprising:
flowing the silicon source precursor over the gate structure;
flowing the carbon source precursor over the gate structure;
flowing the oxygen over the gate structure at a third flow rate different from the first flow rate; and
flowing the nitrogen over the gate structure at a fourth flow rate different from the second flow rate.