US 11,705,324 B2
Apparatus and method for wafer cleaning
Hsin-Hsien Lu, Hsinchu (TW); Ting-Kui Chang, New Taipei (TW); and Jung-Tsan Tsai, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on May 3, 2021, as Appl. No. 17/306,767.
Application 17/306,767 is a division of application No. 16/437,352, filed on Jun. 11, 2019, granted, now 10,998,184.
Application 16/437,352 is a division of application No. 15/416,331, filed on Jan. 26, 2017, granted, now 10,325,772.
Application 15/416,331 is a division of application No. 13/752,415, filed on Jan. 29, 2013, granted, now 9,576,789, issued on Feb. 21, 2017.
Prior Publication US 2021/0257211 A1, Aug. 19, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/306 (2006.01)
CPC H01L 21/02087 (2013.01) [H01L 21/02057 (2013.01); H01L 21/30625 (2013.01); H01L 21/67046 (2013.01); H01L 21/67051 (2013.01); H01L 21/67219 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for cleaning a wafer, comprising:
performing a chemical mechanical polishing (CMP) of a wafer in a first enclosure configured to contain the wafer during CMP;
dispensing and directing a cleaning fluid toward a far edge of the wafer after the CMP of the wafer; and
performing a brush cleaning process on the wafer in a second enclosure different from the first enclosure, the second enclosure configured to contain the wafer during the brush cleaning process following CMP, wherein the dispensing and directing the cleaning fluid is performed in an area located between the first and second enclosures.