CPC H01L 21/02087 (2013.01) [H01L 21/02057 (2013.01); H01L 21/30625 (2013.01); H01L 21/67046 (2013.01); H01L 21/67051 (2013.01); H01L 21/67219 (2013.01)] | 19 Claims |
1. A method for cleaning a wafer, comprising:
performing a chemical mechanical polishing (CMP) of a wafer in a first enclosure configured to contain the wafer during CMP;
dispensing and directing a cleaning fluid toward a far edge of the wafer after the CMP of the wafer; and
performing a brush cleaning process on the wafer in a second enclosure different from the first enclosure, the second enclosure configured to contain the wafer during the brush cleaning process following CMP, wherein the dispensing and directing the cleaning fluid is performed in an area located between the first and second enclosures.
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