CPC H01J 37/05 (2013.01) [C23C 14/18 (2013.01); C23C 14/48 (2013.01); H01J 37/1477 (2013.01); H01J 37/20 (2013.01); H01J 37/317 (2013.01); H01J 37/3171 (2013.01); H01L 21/046 (2013.01); H01L 29/32 (2013.01); H01J 2237/024 (2013.01); H01J 2237/057 (2013.01); H01J 2237/1518 (2013.01); H01J 2237/20214 (2013.01)] | 3 Claims |
1. A method for implanting ions in wafers, comprising:
performing implantation of ions in a wafer by irradiating the wafer with an ion beam passing through an implantation filter, which is an energy filter with a structured filter membrane;
wherein the wafer is heated to a temperature of more than 200° C. during the implantation.
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