US 11,705,300 B2
Method and device for implanting ions in wafers
Florian Krippendorf, Jena (DE); and Constantin Csato, Stammbach (DE)
Assigned to MI2-FACTORY GMBH, Jena (DE)
Filed by mi2-factory GmbH, Jena (DE)
Filed on Jun. 4, 2021, as Appl. No. 17/338,933.
Application 17/338,933 is a division of application No. 16/348,800, granted, now 11,056,309, previously published as PCT/EP2017/080526, filed on Nov. 27, 2017.
Claims priority of application No. 10 2016 122 791.9 (DE), filed on Nov. 25, 2016.
Prior Publication US 2021/0296075 A1, Sep. 23, 2021
Int. Cl. H01J 37/317 (2006.01); H01J 37/05 (2006.01); C23C 14/18 (2006.01); C23C 14/48 (2006.01); H01J 37/147 (2006.01); H01J 37/20 (2006.01); H01L 21/04 (2006.01); H01L 29/32 (2006.01)
CPC H01J 37/05 (2013.01) [C23C 14/18 (2013.01); C23C 14/48 (2013.01); H01J 37/1477 (2013.01); H01J 37/20 (2013.01); H01J 37/317 (2013.01); H01J 37/3171 (2013.01); H01L 21/046 (2013.01); H01L 29/32 (2013.01); H01J 2237/024 (2013.01); H01J 2237/057 (2013.01); H01J 2237/1518 (2013.01); H01J 2237/20214 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A method for implanting ions in wafers, comprising:
performing implantation of ions in a wafer by irradiating the wafer with an ion beam passing through an implantation filter, which is an energy filter with a structured filter membrane;
wherein the wafer is heated to a temperature of more than 200° C. during the implantation.