US 11,705,198 B2
Programmable resistive memory element and a method of making the same
Viorel-Georgel Dumitru, Ploiesti (RO); Cristina Besleaga Stan, Bucharest (RO); Alin Velea, Bucharest (RO); and Aurelian-Catalin Galea, Magurele (RO)
Assigned to CYBERSWARM, INC., Prahova (RO)
Filed by CYBERSWARM, INC., Prahova (RO)
Filed on Nov. 19, 2021, as Appl. No. 17/531,127.
Application 17/531,127 is a continuation of application No. 17/158,731, filed on Jan. 26, 2021, granted, now 11,183,240.
Application 17/158,731 is a continuation of application No. 16/431,290, filed on Jun. 4, 2019, granted, now 10,902,914, issued on Jan. 26, 2021.
Claims priority of provisional application 62/683,341, filed on Jun. 11, 2018.
Prior Publication US 2022/0076747 A1, Mar. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01)
CPC G11C 13/0069 (2013.01) [G11C 11/5685 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0038 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A programmable resistive memory element with multiple resistance states, comprising:
an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer;
a first electrical contact and a second electrical contact disposed on the IGZO resistive layer; and
a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.