US 11,705,190 B2
Method of programming memory device and related memory device
Ying Cui, Wuhan (CN); Jianquan Jia, Wuhan (CN); and Kaikai You, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Apr. 26, 2021, as Appl. No. 17/241,010.
Application 17/241,010 is a continuation of application No. 16/699,115, filed on Nov. 29, 2019, granted, now 11,024,371.
Application 16/699,115 is a continuation of application No. PCT/CN2019/110767, filed on Oct. 12, 2019.
Prior Publication US 2021/0249072 A1, Aug. 12, 2021
Int. Cl. G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); H10B 41/27 (2023.01)
CPC G11C 11/5628 (2013.01) [G11C 16/0483 (2013.01); G11C 16/24 (2013.01); H10B 41/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a plurality of memory cells in a plurality of rows;
a plurality of word lines respectively coupled to the plurality of rows of the memory cells; and
a control circuitry coupled to the plurality of memory cells via the plurality of word lines, and configured to:
apply a first program voltage to a first word line of the plurality of word lines, the first word line being coupled to a first row of the plurality of rows of the memory cells;
after applying the first program voltage to the first word line, apply a second program voltage to a second word line of the plurality of word lines, the second word line being coupled to a second row of the plurality of rows of the memory cells; and
after applying the second program voltage to the second word line, perform a pre-charge operation comprising one of:
retaining a first voltage in the first word line, applying a pre-pulse voltage having a first duration to a bit line coupled to, in a column, a memory cell of the plurality of memory cells corresponding to the second word line, and applying a second voltage having a second duration to the second word line, wherein the second voltage is greater than the first voltage, and the first duration is longer than the second duration; or
applying a third voltage to the first word line for lowering a potential of the first word line and retaining a fourth voltage in the second word line, wherein the fourth voltage is greater than the third voltage.