US 11,705,172 B2
Memory device, memory system including the same and operating method thereof
Hojun Chang, Seoul (KR); and Hundae Choi, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 3, 2022, as Appl. No. 17/567,306.
Claims priority of application No. 10-2021-0074166 (KR), filed on Jun. 8, 2021.
Prior Publication US 2022/0392503 A1, Dec. 8, 2022
Int. Cl. G11C 7/22 (2006.01); G11C 7/10 (2006.01); G11C 8/18 (2006.01); G11C 29/02 (2006.01)
CPC G11C 7/222 (2013.01) [G11C 7/1066 (2013.01); G11C 7/1093 (2013.01); G11C 8/18 (2013.01); G11C 29/023 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a first register configured to store a first code value;
a second register configured to store a second code value;
a third register storing first training information;
a duty cycle adjuster configured to select one of the first code value and the second code value according to operation mode information and to adjust a duty of a data transmission clock according to the selected code value; and
a duty cycle monitor configured to perform first training on a write path according to a training request from an external device and to perform second training on a read path,
wherein the first code value is transmitted from the external device,
the second code value corresponds to a result value of the second training, and the first training information includes a result value of the first training.