US 11,703,766 B2
Materials and methods for forming resist bottom layer
Jing Hong Huang, Hsinchu (TW); Chien-Wei Wang, Hsinchu County (TW); Shang-Wern Chang, Hsinchu County (TW); and Ching-Yu Chang, Yilang County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/814,773.
Application 17/814,773 is a continuation of application No. 16/414,648, filed on May 16, 2019, granted, now 11,442,364.
Claims priority of provisional application 62/691,075, filed on Jun. 28, 2018.
Prior Publication US 2022/0373891 A1, Nov. 24, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/38 (2006.01)
CPC G03F 7/38 (2013.01) 20 Claims
OG exemplary drawing
 
1. A polymer comprising:
a plurality of first cross-linkers activatable by ultraviolet (UV) exposure;
a plurality of second cross-linkers activatable by heat exposure;
a plurality of hybrid cross-linkers activatable by both UV exposure and heat exposure; and
a polymer backbone bonded to the plurality of first, second, and hybrid cross-linkers, wherein a total amount of second cross-linkers bonded to the polymer backbone is smaller than a total amount of first cross-linkers bonded to the polymer backbone.